CAV25512YE-GT3

  • image of Memory>CAV25512YE-GT3
  • image of Memory>CAV25512YE-GT3
CAV25512YE-GT3
Memory
onsemi
IC EEPROM 512KB
-
卷带(TR) 散装
40600
-
: 4.545
: 40600

3

4.545

13.635

image of Memory>CAV25512YE-GT3
image of Memory>CAV25512YE-GT3
CAV25512YE-GT3
CAV25512YE-GT3
Memory
onsemi
IC EEPROM 512KB
-
卷带(TR) 散装
40600
TYPEDESCRIPTION
Mfronsemi
SeriesAutomotive, AEC-Q100
PackageTape & Reel (TR)
Part StatusActive
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size512Kb (64K x 8)
Memory InterfaceSPI
Clock Frequency10 MHz
Write Cycle Time - Word, Page5ms
Voltage - Supply2.5V ~ 5.5V
Operating Temperature-40°C ~ 125°C (TA)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP
Base Product NumberCAV25512
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